continental device india limited data sheet page 1 of 3 2N6121, 6122, 6123 npn plastic power transistors 2n6124, 6125, 6126 pnp plastic power transistors medium power linear and switching applications absolute maximum ratings 6121 6122 6123 6124 6125 6126 collector-base voltage (open emitter) v cbo max. 45 60 80 v collector-emitter voltage (open base) v ceo max. 45 60 80 v collector current i c max. 4.0 a total power dissipation up to t c = 25c p tot max. 40 w junction temperature t j max. 150 c collector-emitter saturation voltage i c = 1.5 a; i b = 0.15 a v cesat max. 0.6 v d.c. current gain i c = 1.5 a; v ce = 2 v h fe min. 25 25 20 max. 100 100 80 ratings (at t a =25c unless otherwise specified) limiting values 6121 6122 6123 6124 6125 6126 collector-base voltage (open emitter) v cbo max. 45 60 80 v collector-emitter voltage (open base) v ceo max. 45 60 80 v emitter-base voltage (open collector) v ebo max. 5.0 v 2N6121, 2n6122, 2n6123 2n6124, 2n6125, 2n6126 pin configuration 1. base 2. collector 3. emitter 4. collector b 1 23 j m g d h a oo k n l f e c dim min. max. all diminsions in mm. a 14.42 16.51 b 9.63 10.67 c 3.56 4.83 d0.90 e 1.15 1.40 f 3.75 3.88 g 2.29 2.79 h 2.54 3.43 j0.56 k 12.70 14.73 l 2.80 4.07 m 2.03 2.92 n 31.24 odeg 7 1 2 3 4 to-220 plastic package continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
continental device india limited data sheet page 2 of 3 collector current i c max. 4.0 a collector current (peak) i cm max. 7.0 a base current i b max. 1.0 a total power dissipation up to t c = 25c p tot max. 40 w derate above 25c max. 320 mw / c junction temperature t j max. 150 c storage temperature t stg ?65 to +150 oc thermal resistance from junction to case r th j?c 3.12 c/w characteristics t amb = 25c unless otherwise specified 6121 6122 6123 6124 6125 6126 collector cutoff current i b = 0; v ce = 45 v i ceo max. 1.0 ? ? ma i b = 0; v ce = 60 v i ceo max. ? 1.0 ? ma i b = 0; v ce = 80 v i ceo max. ? ? 1.0 ma v eb(off) = 1.5 v; v ce = 45 v i cex max. 0.1 ? ? ma v eb(off) = 1.5 v; v ce = 60 v i cex max. ? 0.1 ? ma v eb(off) = 1.5 v; v ce = 85 v i cex max. ? ? 0.1 ma v eb(off) = 1.5 v; v ce = 45 v; t c = 125c i cex max. 2.0 ? ? ma v eb(off) = 1.5 v; v ce = 60 v; t c = 125c i cex max. ? 2.0 ? ma v eb(off) = 1.5 v; v ce = 80 v; t c = 125c i cex max. ? ? 2.0 ma i e = 0; v cb = 45 v i cbo max. 0.1 ? ? ma i e = 0; v cb = 60 v i cbo max. ? 0.1 ? ma i e = 0; v cb = 80 v i cbo max. ? ? 0.1 ma emitter cut-off current i c = 0; v eb = 5 v i ebo max. 1.0 ma breakdown voltages i c = 100 ma; i b = 0 v ceo(sus) * min. 45 60 80 v i c = 1 ma; i e = 0 v cbo min. 45 60 80 v i e = 1 ma; i c = 0 v ebo min. 5.0 v saturation voltages i c = 1.5 a; i b = 0.15 a v cesat * max. 0.6 v i c = 4 a; i b = 1.0 a v cesat * max. 1.4 v base-emitter on voltage i c = 1.5 a; v ce = 2 v v be(on) * max. 1.2 v d.c. current gain i c = 1.5 a; v ce = 2 v h fe * min. 25 25 20 max.100 100 80 i c = 4 a; v ce = 2 v h fe * min. 10 10 7.0 small signal current i c = 0.1 a; v ce = 2 v; f = 1.0 khz h fe min. 25 transition frequency at f = 1 mhz i c = 1 a; v ce = 4 v f t min. 2.5 mhz * pulse test: pulse width
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-2579 6150, 5141 1112 fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
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